Chip challenge 1 nanometer, also cannot do without tungsten material application!
Tungsten material with its excellent properties of mechanics, heat, electricity, etc, has become indispensable to modern many industrial raw materials, such as a large throat lining of the rocket will need to use tungsten copper alloy, and many small chip components also need to use tungsten molybdenum products, such as diffusion barrier layer, adhesive layer and electronic encapsulation materials, transistor, etc.
Chip is a semiconductor component produced by a lot of complex design process of integrated circuit, composed of a large number of transistors, widely used in television, computer, audio, electronic organ, DVD player, video recorder, mobile phone, remote control, camera, alarm and other equipment.
At present, the main semiconductor process has advanced to 5nm and 3nm nodes. Because the number of transistors a chip can accommodate per unit area is approaching the physical limit of semiconductor silicon, chip performance can no longer improve significantly year by year.
To solve this problem, some research teams doped bismuth (Bi) into the two-dimensional material, which not only made the size of the product less than 1 nanometer, but also effectively solved the problem of high resistance and low current of the two-dimensional material.
Normally, the more transistors an integrated circuit has, the more data it can store and the more processing power it has. Therefore, it is necessary for semiconductor materials to challenge below 1nm in order to obtain higher performance chips.
The scientists also proposed that transistors could be made from a single layer of molybdenum disulfide and tungsten disulfide semiconductor materials, which would allow for faster data processing of the semiconductor components.
Because of its high melting point, strong resistance to high temperature, large electron emission coefficient, good chemical stability and excellent heat dissipation, tungsten target material has become the preferred material for diffusion barrier layer and adhesive layer inside the chip. In addition, the main packaging materials for integrated circuits are mostly tungsten - tungsten copper alloy.
In addition to excellent electrochemical performance and heat dissipation performance, tungsten-copper alloy also has the characteristics of thermal expansion coefficient matching with silicon wafer and gallium arsenide, so it can make electronic packaging materials with better performance in all aspects.
